SAN FRANCISCO—NOR flash memory vendor Spansion Inc. Tuesday (Aug. 9) announced what it said was the semiconductor industry's first single-die, 4-gigabit (Gb) NOR product implemented at the 65-nm node.
Spansion (Sunnyvale, Calif.) said the latest addition to its GL-S product line delivers high quality and fast read performance. The 4-Gb NOR device is sampling this month, Spansion said.
Based on Spansion's proprietary MirrorBit charge-trapping technology, the Spansion GL-S is up to 45 percent faster read than competing NOR flash products, according to Spansion. The Spansion GL-S family is currently offered at 128-Mb through 2-Gb densities and the company is gaining design win momentum for the product family with consumer, automotive, gaming, telecom and industrial applications, according to the company.
Spansion, NOR, Flash, Memory, Semiconductor Spansion claims first 4-Gb NOR flash
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