ST supports study lab in northeast China
LONDON – STMicroelectronics and Harbin Institute of Technology (HIT) in northeastern China have announced the opening of a joint laboratory with the aim of supporting the study, research and development of applications in medical electronics, power management and multimedia convergence.
The laboratory will start with work on smart-sensor applications using iNemo development tools.
ST did not indicate how much money, if any, it was investing in the project or how many students and researchers would work in the laboratory.
ST said it will provide IC samples, technical documentation and training to help students while HIT will provide the facilities and the managers.
"We expect the joint lab will contribute to the nurturing of the next generation of engineers and should create new reference designs for the industry," said Patrick Boulaud, ST's regional vice president for analog, MEMS and sensors, in a statement. "ST is on the cutting-edge of the MEMS technology revolution and our cooperation with ST gives faculty and students access to the most advanced design tools," said Professor XU Dianguo, assistant principal of HIT, in the same statement.
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TAG:ST Harbin MEMS multimedia power semiconductor study research development
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