MICRON will begin production of its Hybrid Memory Cube device using IBM’s advanced through-silicon via (TSV) process.
The Hybrid Memory Cube features a stack of individual chips connected by vertical pipelines or “vias”. These combine high-performance logic with Micron’s DRAM. It is hoped that the new device will deliver bandwidth and efficiencies a leap beyond current device capabilities.
HMC prototypes have clocked in with bandwidth of 128GB/s, in comparison with current state-of-the-art devices which deliver 12.8GB/s.
HMC also requires 70 percent less energy to transfer data while offering a small form factor — just 10 percent of the footprint of conventional memory.
IBM says its new 3D manufacturing technology is used to connect the 3D micro structure, and will be the foundation for commercial production of the new memory cube.
Hybrid Memory Cube parts will be manufactured at IBM's advanced semiconductor fab in East Fishkill, New York, using the company's 32nm, high-K metal gate process technology.
IBM says the 3D manufacturing process will have applications beyond memory. 3D chip technology is expected to make its way into consumer products in the next few years, drastically improving battery life and functionality.
IBM's 3D process for next generation memory devices Electronics News
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